Photoelectric conversion device

ABSTRACT

A plurality n of semiconductor elements U 1  to U n  are sequentially formed on a substrate side by side and connected in series. The element U i  (where i=1, 2, . . . n) has a first electrode E i  formed on the substrate, a non-single-crystal semiconductor laminate member Q i  formed on the electrode E i  and a second electrode F i  formed on the laminate member Q i . The electrode F j+1  (J=1, 2 . . . (n-1)) is coupled with the electrode E j  via a coupling portion K j  formed by an extension of the electrode F j+1 . The laminate member Q i  has a N (or P) type first semiconductor layer, an I type second semiconductor layer and P (or N) type third semiconductor layer. The first E i  has a first metal oxide layer which is formed of indium oxide or consisting principally thereof (or tin oxide or consisting principally thereof), depending upon whether the first semconductor layer is N or P type, respectively, and is contact with the first semiconductor layer. The electrode F i  and the coupling portion K j  have a second metal oxide layer which is formed of tin oxide or consisting principally thereof (or indium oxide or consisting principally thereof) depending upon whether the second semiconductor layer is P or N type, respectively, the second metal oxide layer being in contact with the third semiconductor layer and the coupling portion K j  being coupled with first metal oxide layer of the electrode E j .

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to improvement in or relating to aphotoelectric conversion device in which a number of semiconductorelements are sequentially arranged on a substrate in side-by-siderelation and connected in series.

The invention also pertains to a method for the manufacture of such aphotoelectric conversion device.

2. Description of the Prior Art

There has been proposed in U.S. Pat. No. 4,315,096 a photoelectricconversion device of the type wherein a plurality n (n being an integergreater than one) of semiconductor elements U₁ to U_(n) are sequentiallyformed side by side on a substrate having an insulating surface and areconnected in series one to another.

According to this semiconductor photoelectric conversion device, thesemiconductor element U_(i) (i=1, 2, . . . n) has a first electrodeE_(i) formed on the substrate, a non-single-crystal semiconductorlaminate member Q_(i) formed on the first electrode E_(i) to form atleast one semiconductor junction and a second electrode F_(i) formed onthe non-single-crystal semiconductor laminate member Q_(i) in opposingrelation to the first electrode E_(i). The second electode F_(j+1) ofthe semiconductor element U_(j+1) (j=1, 2, . . . (n-1)) is coupled withthe first electrode E_(j) of the semiconductor element U_(j) through acoupling portion K_(j) formed as an extension of the second electrodeF_(j+1).

With such a semiconductor photoelectric conversion device, electricalloss resulting from the contact resistance between the coupling portionK_(j) and the first electrode E_(j) is an obstacle to enhancement of thephotoelectric conversion efficiency. For reducing the electrical loss toraise the photoelectric conversion efficiency, it is necessary that thecontact resistance between the coupling portion K_(j) and the electrodeE_(j) be low and be not increased by long-term use.

In the abovesaid conventional photoelectric conversion device, however,no consideration is paid to designing the coupling portion K_(j) and theelectrode E_(j) to prevent the contact resistance therebetween frombeing increased by long-term use. Accordingly, this prior art devicepossesses the defect that its long-term use will impair thephotoelectric conversion efficiency.

Further, in the photoelectric conversion device mentioned above, thecoupling portion K_(j) is shown to be coupled with the top surface ofthe first electrode E_(j). In this case, however, in order to obtaingood contact between the coupling portion K_(j) and the first electrodeE_(j), it is necessary that the area of the contact portion in thelateral direction be increased. But this makes it impossible to form thephotoelectric conversion device with high density.

Moreover, in the photoelectric conversion device of the abovesaid U.S.patent, it is shown that the coupling portion K_(j) makes contact withthe first electrode E_(j) only at the outer side thereof. In this case,the contact area between the coupling portion K_(j) and the firstelectrode E_(j) is extremely small, so that good contact cannot beobtained between them.

Therefore, the aforementioned prior art has the defect that aphotoelectric conversion device with low electrical loss cannot beobtained with high density.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a novelphotoelectric conversion device which is free from the abovesaiddefects.

Another object of the present invention is to provide a method for themanufacture of the abovesaid photoelectric conversion device.

In accordance with an aspect of the present invention, as is the casewith the photoelectric conversion device of the aforementioned U.S.patent, a plurality n of semiconductor elements U₁ to U_(n) are formedon a substrate having an insulating surface, and the semiconductorelement U_(i) has a first electrode E_(i), a non-single-crystalsemicondutor laminate member Q_(i) and a second electrode F_(i), and thesecond electrode F_(j+) 1 is disposed to make contact with the firstelectrode E_(j) through a coupling portion K_(j) formed by an extensionof the second electode F_(j+1).

According to the present invention, however, the first electrode E_(i)has a first conductive metal oxide layer, and the second electrode F_(i)and the coupling portion K_(j) have a conductive second metal oxidelayer and the second metal oxide layer of the coupling portion K_(j) iscoupled with the first metal oxide layer of the first electrode E_(j).

Since the first and second oxide layers are both formed of a metaloxide, even if the device is used for a long time, there would notpractically occur such a reaction which leads to an increase in thecontact resistance in the contact portion between them. Consequently,the contact resistance between the coupling portion K_(j) and the firstelectrode E_(j) is not raised by long-term use and, accordingly, theelectrical loss is not increased by long-term use.

Therefore, the photoelectric conversion device of the present inventionmaintains its high photoelectric conversion efficiency for a long periodof time.

In accordance with another aspect of the present invention, a grooveO_(j) is formed in the non-single-crystal semiconductor laminate memberQ_(j) to extend between the second electrode F_(j+1) and the firstelectrode E_(j). The groove O_(j) extends into the first electrodeE_(j), and the coupling portion K_(j) extends into such a groove O_(j)to make contact with the side of the first electrode E_(j) exposed tothe groove O_(j).

Therefore, it is possible to obtain good contact between the couplingportion K_(j) and the first electrode E_(j) without increasing the areaof the contact portion therebetween in the lateral direction.

Accordingly, a photoelectric conversion device which is small inelectrical loss and hence is high in photoelectric conversion efficiencycan be obtained with high density.

In accordance with another aspect of the present invention, the grooveO_(j) is formed in the non-single-crystal semiconductor laminate memberQ_(j) between the second electrode F_(j+1) and the first electrode E_(j)to extend into the first electrode E_(j) with a width smaller than inthe non-single-crystal semiconductor laminate member Q_(j). The couplingportion K_(j) extends into such a groove O_(j) to make contact with thetop and the side of the first electrode E_(j) exposed to the grooveO_(j).

Therefore, it is possible to obtain good contact between the couplingportion K_(j) and the first electrode E_(j) without increasing thecontact area therebetween in the lateral direction.

Accordingly, a photoelectric conversion device which is small inelectrical loss and hence high in photoelectric conversion efficiencycan be obtained with high density.

According to the manufacturing method of the present invention, thesemiconductor elements are formed by a process including the followingsteps (a) to (d):

(a) A first conductive layer, which is a layered member having aconductive metal oxide layer and which will ultimately serve as a firstelectrode of each semiconductor element, is formed on the substrate andthe first conductive layer is subjected to a first scanning by a laserbeam, thereby providing the first electrode of each semiconductorelement.

(b) A non-single-crystal semiconductor laminate member which willultimately serve as a non-single-crystal semiconductor laminate memberof each semiconductor element having formed therein at least onesemiconductor junction is formed on the substrate in such a manner as tocover the first electrode of each semiconductor element, providing thenon-single-crystal semiconductor laminate member thereof

(c) The non-single-crystal semiconductor of the semiconductor elementsare subjected to a second scanning by a laser beam, thereby cuttinggrooves therein to expose the first electrodes to the outside.

(d) A second conductive layer, which is a layerd member having aconductive metal oxide layer and which will ultimately serve as a secondelectrode of each semiconductor element is formed to extend on thenon-single-crystal semiconductor laminate members and in the grooves,and then the second conductive layer is subjected to a third scanning bya laser beam, thereby providing the second electrode of eachsemiconductor element.

According to the manufacturing method of the present invention includingthe abovesaid steps, since the coupling portion of the second electrodeof each semiconductor element, formed by an extension of the secondelectrode itself, is connected with the first electrode of theimmediately preceeding semiconductor element through a metal exidelayer, excellent electrical coupling can be achieved between the secondelectrode of the former and the first electrode of the latter.

Accordingly, it is possible with the manufacturing method of the presentinvention to provide a photoelectric conversion device of highphotoelectric conversion efficiency.

Other objects, features and advantages of the present invention willbecome more fully apparent from the following detailed description takenin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically illustrating am embodiment of thepresent invention;

FIG. 2 is a schematic sectional view taken on the line II--II in FIG. 1;

FIGS. 3A to D are detailed cross-sectional views showing on an enlargedscale parts of the embodiment of the present invention shown in FIG. 2.

FIGS. 4A and B are detailed sectional views showing on an enlarged scaleother parts of the embodiment of FIG. 1:

FIGS. 5A to G are cross-sectional views schematically showing a sequenceof steps involved in the manufacture of the photoelectric conversiondevice of the embodiment of the present invention depicted in FIGS. 1 to4;

FIGS. 6A to D, 7A to E and 8 are schematic cross-sectional views,similar to FIG. 3, illustrating other embodiments of the presentinvention, respectively;

FIG. 9 is a plan view schematically illustrating another embodiment ofthe present invention;

FIG. 10 is a schematic cross-sectional view taken on the line X--X inFIG. 9;

FIGS. 11A and B are enlarged cross-sectional views showing a part of thephotoelectric conversion device of the present invention illustrated inFIGS. 9 and 10; and

FIGS. 12A-H are schematic cross-sectional views showing a sequence ofsteps involved in the manufacture of the photoelectric conversion devicedepicted in FIG. 9 and 10.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will be given first, with reference to FIGS. 1 to 3, of anembodiment of the present invention.

The embodiment of the photoelectric conversion device of the presentinvention shown in FIGS. 1 to 3 has a plurality n (n being an integerlarger than one) of semicondutor elements U₁ to U_(n) formed side byside on a substrate 1.

The substrate 1 has an insulating surface 2.

The substrate 1 may be a light-transparent substrate made of glass,synthetic organic resin or the like, or a flexible sheet of such assynthetic organic resin. It is also possible to employ anon-light-transparent substrate of ceramics, organic resin or the like,a non-light-transparent metal substrate having its surface insulated, ora flexible, sheet-like member having an insulating film formed on thesurface of a flexible metallic sheet. The substrate 1 is, for example,rectangular in shape and 20 cm wide and 60 cm long.

In the case of the substrate 1 being the abovesaid, flexible metallicsheet-like member, it is made, for instance, of aluminum or analuminum-base alloy and has a thickness of, for example, 10 to 200 μm,preferably, 50 to 150 μm.

The insulating film formed on the surface of the flexible metallicsheet-like member is, for example, an oxide film resulting fromoxidation of the surface of the sheet-like member. When the flexiblemetallic sheet-like member is made of aluminum or an aluminum-basealloy, the abovesaid oxide film is an aluminum oxide (alumina, Al₂ O₃)or an insulating material consisting principally of aluminum oxide. Theoxide film has a thickness small enough not to impair the flexibility ofthe flexible metallic sheet-like member, for instance, in the range of0.1 to 2 μm, preferably 0.3 to 1 μm. Such an oxide film can be formed byheating the flexible metallic sheet-like member made of aluminum or thealuminum-base alloy.

The semiconductor element U_(i) (i=1, 2, . . . n) on the substrate 1 hasan electrode E_(i) formed on the substrate 1, a non-single-crystalsemiconductor laminate member Q_(i) formed on the electrode E_(i) and anelectrode F_(i) formed on the non-single-crystal semiconductor laminatemember Q_(i) in opposing relation to the electrode E_(i).

The electrode E_(i) is, for example, rectangular in shape and has awidth of 5 to 40 mm, preferably 15 mm and a length slightly smaller thanthe width of the substrate 1.

Electrodes E_(j) (j=1, 2, . . . (n-1)) and E_(j+1) are spaced apart by agroove G_(j) which is shown to extend in the vertical direction inFIG. 1. The groove G_(j) is, for example, 40 μm wide.

The electrode E_(i) may be a single-layer structure as shown in FIG. 3A.The electrode E_(i) may also be a two-layer structure which comprises alayer 4 making contact with the substrate 1 and a layer 5 formed on thelayer 4 in contact with the non-single-crystal semiconductor laminatemember Q_(i) as shown in FIGS. 3C and D. Also it is possible to employ athree-layer structure having another layer sandwiched between the layers4 and 5 though not shown.

The electrode E_(i) may be a reflective electrode when the electrodeF_(i) is light-transparent. When the electrode E_(i) is the reflectiveelectrode, light incident on the non-single-crystal semiconductorlaminate member Q_(i) on the opposite side from the substrate 1 passesthrough the non-single-crystal semiconductor laminate member Q_(i), thenis reflected by the surface of the electrode E_(i) back to thenon-single-crystal semiconductor laminate member Q_(i) to passtherethrough. The larger the optical path length of the reflected lightin the non-single-crystal semiconductor laminate member Q_(i) is, themore the utilization efficiency of light is raised. From this point ofview, it is preferable that the surface of the electrode E_(i) on theside of the non-single-crystal semiconductor laminate member Q_(i) haveirregularities oblique to planes perpendicular to the substrate surfaceto form a diffuse reflection surface 6 at the boundary between it andthe non-single-crystal semiconductor laminate member Q_(i).

In the case where the electrode E_(i) is reflective, it may be of asingle-layer structure formed by a reflective conductive layer.

In this case, the layer may be one that is formed of aluminum orsilicon, or consisting principally thereof. In the case where theelectrode E_(i) is a reflective electrode and has the two-layerstructure comprised of the layers 4 and 5, in order to simultaneouslysatisfy the requirements that the electrode E_(i) be of highconductivity and high reflectivity and to prevent that when thenon-single-crystal semiconductor laminate member Q_(i) is formed, thematerial of its non-single-crystal semiconductor layer on the side ofthe electrode E_(i) or an impurity contained therein reacts with thematerial of the reflective electrode to form a layer of high contactresistance in the interface between the electrode E_(i) and thenon-single-crystal semiconductor layer Q_(i), it is preferable that thelayer 4 be a reflective conductive layer and the layer 5 a lighttransparent metal oxide layer 5.

In the case where the layer 4 of the electrode E_(i) is the reflectiveconductive layer, it may preferably be made of metal. The metal may bestainless steel but, in view of the requirements of high conductivityand high reflectivity for the electrode E_(i), it is preferable toemploy aluminum (Al), silver (Ag), an aluminum-base alloy containing,for example, 0.1 to 2 volume % of silicon, or a silver-base alloy.

When the layer 5 of the electrode E_(i) is a light-transparent metaloxide layer, in order to ensure that the layer 5 be high in conductivityand in transmittance and to prevent that when the non-single-crystalsemiconductor laminate layer Q_(i) is formed, the metallic oxide reactswith the material or impurity of the non-single-crystal semiconductorlayer of the laminate member Q_(i) on the side of the electrode E_(i) toform the abovesaid high contact resistance layer, it is preferable toform the layer 5 of a tin oxide (SnO₂ or SnO) or a metallic oxideconsisting principally of such a tin oxide, for instance, a tin oxidecontaining halogen or, 1 to 10 wt % of antimony oxide in the event thatthe non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is p-type. In the case where the layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is N-type, it is preferable to use an indium oxide or a metallic oxideconsisting principally of, for instance, an indium oxide containing 1 to10 wt % of tin oxide. In this case, the light transparent conductivelayer 5 is 300 to 600 A thick.

In the case where the electrode E_(i) is such a two-layer reflectiveelectrode comprising the layer 4 and the layer 5, when the abovesaiddiffuse reflection surface 6 is formed at the boundary between theelectrode E_(i) and the non-single-crystal semiconductor laminate memberQ_(i), it is formed on the surface of the layer 5 on the side of thelaminate member Q_(i).

In the case where the electrode E_(i) is comprised of the layers 4 and 5these layers are a reflective conductive layer and a light-transparentconductive layer to form a reflective electrode, the surface of thelayer 4 may also be formed as the diffuse reflection surface in theinterface between it and the light-transparent conductive layer 5,through not shown.

When the substrate 1 is light-transparent, the electrode E_(i) is formedas a light-transparent electrode.

In such a case, the light-transparent electrode may be a metal oxidelayer.

Where the electrode E_(i) is a single-layer light-transparent electrode,when the non-single-crystal semiconductor layer of thenon-single-crystal laminate member Q_(i) on the side of the electrodeE_(i) is P-type, the electrode E_(i) may preferably be of a tin oxide orconsisting principally thereof for the same reasons as given previously.

When the abovesaid non-single-crystal semiconductor layer is N-type, theelectrode E_(i) may preferably be a metal oxide layer formed of anindium oxide or consisting principally thereof.

In the case where the electrode E_(i) has the two-layer structurecomprised of the layers 4 and 5 and is light-transparent, if thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is P-type, it is preferable that the layer 5 be a metal oxide layerformed of a tin oxide or consisting principally thereof and the layer 4a metal oxide layer formed of an indium oxide or consisting principallythereof.

When the electrode F_(i) is light-transparent, the electrode E_(i) neednot always be reflective. In this case, if the electrode E_(i) issingle-layer, it may be a layer formed of chromium or consistingprincipally thereof. Moreover, in the case of the two-layer structure,the layer 4 may be the abovesaid metal oxide layer and the layer 5 maybe layer formed of chromium or consisting principally thereof.

In the semiconductor element U_(i) formed on the substrate 1, thenon-single-crystal semiconductor laminate member Q_(j+1) (j=1, 2, . . .(n-1)) on the aforesaid electrode E_(j+1) extends laterally from themarginal edge of the electrode E_(j+1) on the opposite side from theelectrode E_(j) to a position on the electrode E_(j) on the side of theelectrode E_(j+1) across the groove G_(j) separating the electrode E_(j)and E_(j+1) making contact with the non-single-crystal semiconductorlaminate member Q_(j).

The non-single-crystal semiconductor laminate member Q₁ formed on theelectrode E₁ extends laterally onto the substrate 1 to cover the sidesurface of the electrode E₁ on the opposite side from the electrode E₂.

Further, laminate member Q_(n) is formed as anon-single-crystal-semiconductor laminate member Q₀ to laterally extendonto the substrate 1 to cover the side surface of the electrode E_(n) onthe opposite side from the electrode E_(n-1).

The non-single-crystal semiconductor laminate member Q_(i) is formed tovertically extend to cover the electrode E_(i). The non-single-crystalsemiconductor laminate member Q_(i) has cut therein a groove O_(i) whichis shown to extend in the vertical direction in FIG. 1. The grooves O₁to O_(n) are formed simultaneously.

The non-single-crystal semiconductor laminate member Q_(i) formed on theelectrode E_(i) may be formed by one or more such two-layer structures,each composed of a P-type or N-type non-single-crystal semiconductorlayer and another non-single-crystal semiconductor layer of the oppositeconductivity type.

Accordingly, the non-single-crystal semiconductor laminate member Q_(i)can be formed to have at least one PN junction.

Furthermore, the non-single-crystal semiconductor laminate member Q_(i)may preferably be formed by one or more three-layer structures, eachcomposed of a P-type or N-type non-single-crystal semiconductor layer 8,an I-type non-single-crystal semiconductor layer 9 and anon-single-crystal semiconductor layer 10 opposite in conductivity typeto the layer 8 as shown in FIG. 3. Accordingly, the non-single-crystalsemiconductor laminate member Q_(i) may preferably be formed to have atleast one PIN junction.

The non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is P-type when the layer of the electrode E_(i) making contact with thenon-single-crystal semiconductor laminate member Q_(i) is formed by atin oxide or metallic oxide consisting principally of the tin oxide asdescribed previously in respect of FIG. 3. When the layer 5 of theelectrode E_(i) making contact with the non-single-crystal semiconductorlaminate member Q_(i) is formed by an indium oxide or metallic oxideconsisting principally of indium oxide, the non-single-crystalsemiconductor layer of the non-single-crystal semiconductor laminatemember Q_(i) on the side of the electrode E_(i) is N-type.

Accordingly, in the case where the non-single-crystal semiconductorlaminate member Q_(i) has the three-layer structure comprising thenon-single-crystal semiconductor layers 8, 9 and 10 as illustrated inFIG. 3 and the layer of the electrode E_(i) semiconductor laminatemember Q_(i) is formed by a tin oxide or metallic oxide consistingprincipally of tin oxide, the non-single-crystal semiconductor layers 8and 10 are P-type and N-type, respectively. When the light transparentconductive layer 5 is formed by an indium oxide or metal oxideconsisting principally of indium oxide, the non-single-crystalsemiconductor layers 8 and 10 are N-type and P-type, respectively.

The non-single-crystal semiconductor layers making up thenon-single-crystal semiconductor laminate member Q_(i) may preferably beformed of silicon or a semiconductor consisting principally of siliconbut it may also be formed of other semiconductors.

When the non-single-crystal semiconductor laminate member Q_(i) has thethree-layer structure composed of the non-single-crystal semicodnuctorlayers 8, 9 and 10, the non-single-crystal semoconductor layer 8 may beformed, for instance, of silicon to a thickness of 5 to 300 A,preferably 70 to 130 A. Where the non-single-crystal semiconductor layer8 is P-type, for example, boron (B) may be introduced thereinto as aP-type impurity.

The non-single-crystal semiconductor layer 9 can be formed of silicon asis the case with the non-single-crystal semiconductor layer 8 but itsthickness may preferably be larger than that of the layer 8, forinstance, 0.4 to 0.7 μm. The non-single-crystal semiconductor layer 9contains a very small amount of a P-type impurity or does notsubstantially contain either of P-type and N-type impurities and, ifany, their concentrations are negligibly low.

The non-single-crystal semiconductor layer 10 can also be formed ofsilicon as is the case with the non-single-crystal semiconductor layer8. But since the non-single-crystal semiconductor layer 10 is disposedon the side where the light to be converted is incident on thesemiconductor element, it may preferably be formed of a semiconductorwhich has a larger energy band gap than does the semiconductor materialof the non-single-crystal semiconductor layer 8, such as, for example,silicon carbide expressed by Si_(x) C_(1-x) (0<x<1). In this case, thenon-single-crystal semiconductor layer 10 can be formed to a thicknessof 5 to 300 A, typically, in the range of 7 to 130 A.

Incidentally, the aforesaid non-single-crystal semiconductor laminatemember Q₀ has the same structure as the aforementioned one Q_(i).

In the semiconductor element U_(i) formed on the substrate 1, theelectrode F_(i) on the non-single-crystal semiconductor laminate memberQ_(i) is disposed opposite to the electrode E_(i) formed on thenon-single-crystal semiconductor laminate member Q_(i).

In this case, the electrode F_(j+1) extends from a position apart fromthe isolated end portion of the non-single-crystal semiconductorlaminate member Q_(j+1) on the opposite side from the non-single-crystalsemiconductor laminate member Q_(j) onto its isolated end portion on theside of the non-single-crystal semiconductor laminate member Q_(j+1).

The electrode F_(i) extends from a position away from the isolated endportion of the non-single-crystal laminate member Q₁ on the side of thenon-single-crystal semiconductor laminate member Q₂ to the marginal edgeof the substrate 1 to cover the extension of the non-single-crystallaminate member Q₁ on the side surface of the electrode E₁.

On the non-single-crystal semiconductor laminate member Q_(n), anelectrode F₀ similar to the electrode F_(n) is formed to extend from theisolated end portion on the side of the non-single-crystal semiconductorlaminate member Q₀ to the marginal edge of the substrate 1 to cover theside surface of the non-single-crystal semiconductor laminate member Q₀.

The electrodes F_(j) and F_(j+1) are isolated by an isolating portionH_(j). The electrodes F_(j+1) and F₀ are also isolated by an isolatingportion H_(n). The isolating portions H_(i) may be simultaneously formedas grooves as is the case with the grooves G_(i).

The electrode F_(i) may be formed as a single layer as shown in FIG. 3and may also be of the two-layer structure comprised of a layer 21making contact with the non-single-crystal semiconductor laminate memberQ_(i) and a layer 22 formed on the layer 21 as illustrated in FIGS. 3B,3D, and 7. Also it is possible to employ such a three-layer structure asdepicted in FIG. 8 which comprises the layers 21 and 22 and anotherlayer 23 formed on the layer 2.

The electrode F_(i) may be a transparent conductive layer. When theelectrode F_(i) is a transparent single layer, it may be formed of ametallic oxide. In this case, it is required that the metal oxide behigh in conductivity and in transmittance and, when forming theelectrode F_(i), would not react with the material or impurity of thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode F_(i)to form a layer which increases the contact resistance between thenon-single-crystal semiconductor laminate member Q_(i) and the electrodeF_(i) or a layer of low transmittance. To meet such requirements, whenthe non-single-crystal layer of the non-single-crystal semiconductorlaminate member Q_(i) on the side of the electrode F_(i) is N-type, theelectrode F_(i) may preferably be formed of an indium oxide or othermetallic oxide consisting principally of indium oxide, such as, forexample, an indium oxide contaning 1 to 10 wt % of tin oxide. When thenon-single-crystal layer of the non-single-crystal semiconductor tolaminate layer Q_(i) on the side of the electrode F_(i) is P-type, theelectrode F_(i) may preferably be formed of a tin oxide or othermetallic oxide consisting principally of tin oxide. The electrode F_(i)can be formed, for instance, 300 to 600 A thick.

In the case where the electrode F_(i) is transparent and has thetwo-layer structure composed of the layers 21 and 22, the layer 21making contact with the non-single-crystal semiconductor laminate memberQ_(i) may preferably be a layer formed of tin oxide or consistingprincipally thereof, or a layer formed of indium oxide or consistingprincipally thereof as described previously, depending on whether thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) is P-type or N-type. In this case,it is preferable that when the layer 21 is the layer formed of tin oxideor consisting principally thereof, the layer 22 be formed of indiumoxide or consisting principally thereof and, when the layer 21 is formedof indium oxide or consisting principally thereof, the layer 22 beformed of tin oxide or consisting principally thereof.

The electrode F_(i) may be a reflective one when the substrate 1 and theelectrode E_(i) are light-transparent. When the electrode F_(i) is thereflective electrode, it is possible to employ the two-layer structurecomprising the layers 21 and 22, the three-layer structure comprisingthe layers 21, 22, and 23 or further multi-layer structure in additionto the single-layer structure as described previously.

Where the electrode F_(i) is the two-layer structure made up of thelayers 21 and 22, it is preferred that depending on whether thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) contacting the layer 21 is P-type orN-type, the layer 21 be the layer formed of the tin oxide or consistingprincipally thereof or the layer formed of the indium oxide orconsisting principally thereof and the layer 22 be a reflectiveconductive layer as of silver or aluminum, as described previously.

When the electrode F_(i) has the three-layer structure composed of thelayers 21, 22 and 23, it is preferable that the layers 21 and 22 be suchlayers as mentioned above and the layer 23 a nickel layer.

The electrode F_(i) need not always be reflective even if the substrate1 and the electrode E_(i) are light-transparent. In such a case, if theelectrode has the two-layer structure comprised of the layers 21 and 22,it is preferred that the layer 21 be such a layer as mentioned above andthe layer 22 a sublimable conductive layer formed of chromium orconsisting principally thereof.

The electrode F₀ formed to extend on the non-single-crystalsemiconductor laminate member Q₀ has the same structure as the abovesaidelectrode F_(i)

The electrode F_(j+1) of the semiconductor element U_(j+1) (j=1, 2, . .. (n-1)) is coupled with the electrode E_(j) of the semiconductorelement U_(j) through a coupling portion K_(j).

The coupling portion K_(j) extends from the position where the electrodeF_(j+1) is opposite to the electrode E_(j) to the region of theelectrode E_(j) opposite to the electrode F_(j+1), passing through agroove O_(j) by which the non-single-crystal semiconductor laminatemembers Q_(j) and Q_(j+1) are separated. Such a coupling portion K_(j)is formed by an extension of the electrode F_(j+1) formed simultaneouslywith the electrode F_(j+1).

The electrode F₁ of the smiconductor element U₁ extends down to thesurface of the substrate 1 as referred to previously and the extensionconstitutes an external connection terminal 11.

The electrode F₀ extending on the non-single-crystal semiconductorlaminate member Q₀ is coupled with the electrode E_(n) of thesemiconductor element U_(n) through a coupling portion K_(n). In thiscase, the coupling portion K_(n) extends from the position where theelectrode F₀ is opposite to the electrode E_(n) to the region of theelectrode E_(n) opposite to the electrode F₀, passing through a grooveO_(n). Such a coupling portion K_(n) is an extension of the electrode F₀formed silultaneously therewith. The electrode F₀ extends on the sidesurface of the non-single-crystal semiconductor laminate member Q₀ inthe direction reverse from the electrode F_(n) to the marginal edge ofthe substrate 1, and the extending end portion forms a terminal 12 forexternal connection.

The isolated portion H_(j) is formed to extend in the vertical directionin FIG. 1 to go down into the non-single-crystal semiconductor laminatemember Q_(j) to form therein a region 13 underlying the electrodeE_(j+1). The groove O_(j) also extends across that portion of theelectrode E_(j) adjacent to the electrode E_(j+1) in the thickwisedirection. Accordingly, the electrode E_(j) has an isolated portion 14on the side of the electrode E_(j+1).

The isolated portion H_(n) is formed to extend in the vertical directionin FIG. 1 to go down into the non-single-crystal semiconductor laminatemember Q_(n) to form therein the region 13 underlying the electrode F₀.

The groove O_(n) extends across that portion of the electrode E_(n)opposite side from the electrode F₀ in the thickwise direction.Accordingly, the electrode E_(n) has the isolated region 14 on theopposite side from the electrode E_(n-1).

On the substrate 1 is formed a transparent antireflection and protectivefilm 15 to cover the aforesaid semiconductor elements U₁ to U_(n). Inthis case, however, the antireflection and protective film 15 does notextend on the extended portions of the electrodes F₁ and F₀ forming theaforementioned external connection terminals 11 and 12, respectively.

The foregoing is a description of the arrangement of an embodiment ofthe photoelectric conversion device according to the present invention.

Next, a description will be given, with reference to FIGS. 5A to G, ofan embodiment of the photoelectric conversion device manufacturingmethod of the present invention.

In FIGS. 5A to G, parts corresponding to those in FIGS. 1 and 2 areidentified by the same reference numerals and characters and no detaileddescription thereof will be repeated.

The manufacturing method of the photoelectric conversion device shown inFIGS. 5A to G is as follows:

The manufacture starts with the preparation of such a substrate 1 asdescribed previously with respect to FIGS. 1 and 2.

Then, as shown in FIG. 5B, the conductive layer 41 which will ultimatelyform the electrodes E₁ to E_(n) described previously in connection withFIGS. 1 and 2 is formed by a known method on the substrate 1.

In the case where the electrodes E₁ to E_(n) are each formed to have thetwo-layer structure composed of the two layers 4 and 5 as describedpreviously with regard to FIG. 3, the conductive layer 41 is made up ofa layer which will ultimately serve as the layer 4 and another layerwhich ultimately serve as the layer 5, though neither shown nordescribed in detail. The former layer is first formed on the substrate 1by a known method, for example, vapor deposition and then the latterlayer is similarly formed thereon by a known method, for instance, vapordeposition. Next, the conductive layer 41 is scanned by a laser beam(not shown) having a diameter of 30 to 70 μm, typically, 40 μm, by whichthe aforementioned (n-1) grooves G_(i) to G_(n-1) are cut in theconductive layer 41 to form n electrodes E₁ to E_(n) which are separatedfrom adjacent ones of them by the grooves G₁ to G_(n-1), as shown inFIG. 5C. For this scanning, it is possible to employ a laser beam of a1.06 μm wavelength from a YAG laser and a laser beam of a 0.488 or 0.512μm wavelength from an argon laser.

The abovesaid laser beam scanning can be carried out in the air but mayalso be performed in the atmosphere of a gas which reacts with theconductive material of the layer 41 at high temperatures to sputter itfrom the substrate surface. In this case, the gas used may be hydrogenfluride (HF), hydrogen chloride (HCl) Freon gas, CF₄, CHF₃, CClF₃ orlike gas. In the case where the laser beam scanning takes place in theair, burrs are likely to form on the upper marginal edges of the grooveG_(j). Accordingly, it is desirable that the laser beam scanning befollowed by deburring through the use of the abovesaid gas or etchingwith an etchant such as hydrofluoric acid (HF), hydrochloric acid (HCl)Freon liquids C₂ F₃ Cl₄, C₂ F₃ Cl₃ or similar liquid. Moreover, it ispossible to accomplish the laser beam scanning of the conductive layer41 easily and accurately by the aid of a computer while monitoringthrough a video camera device.

Next, a non-single-crystal semiconductor layer 42 is formed by a knownmethod, for example, low-pressure CVD on the substrate 1 to fill thegrooves G₁ to G_(n-1) and to cover the electrode E₁ to E_(n) as shown inFIG. 5D so that the regions of the layer 42 on the electrodes E₁ toE_(n) may be the non-single-crystal semiconductor laminate members Q₁ toQ_(n) described previously in respect of FIGS. 1 and 2.

Where the non-single-crystal semiconductor laminate members Q₁ to Q_(n)are each formed as the three-layer structure consisting of thenon-single-crystal semiconductor layers 8, 9, and 10 as describedpreviously with regard to FIG. 3, non-single-crystal semiconductorlayers which will ultimately be used as the non-single-crystal layers 8,9 and 10 respectively, are formed in this order through the use of aknown method, for instance, the low-pressure CVD method, therebyproviding the non-single-crystal semiconductor laminate member 42.

After this, the non-single-crystal semiconductor laminate members Q₁ toQ_(n) are selectively removed by laser beam scanning to cut therein theaforementioned n grooves O₁ to O_(n) as shown in FIG. 5E. In this case,the groove O_(i) (i=1, 2, ... n) can be formed to extend down to theinsulating film 2 of the substrate 1 across the electrode E_(i) asillustrated. In such a case, the region 14 of the electrode E_(i) isisolated from the other regions. The laser beam scanning of thenon-single-crystal semiconductor laminate members Q₁ to Q_(n) can takeplace in the air as is the case with the conductive layer 41. It is alsopossible to carry out the laser beam scanning in the atmosphere of a gaswhich reacts with the materials of the non-single-crystal semiconductorlaminate member 42 and the electrodes E₁ to E_(n) at high temperaturesto sputter them from the substrate surface. Also in this case, the gasused is of the aforesaid gases. In the case where the laser beamscanning of the non-single-crystal semiconductor laminate members Q₁ toQ_(n) is carried out in the air, it is desirable that the laser beamscanning be followed by deburring through the use of the aforesaid gasor etching with such etchants as mentioned previously. The abovesaidlaser beam scanning can also be performed easily and accurately by theaid of a computer while monitoring through the video camera device.

The groove O_(j) (j=1, 2, ... (n-1)) is formed at a position spaced apredetermined distance apart from the groove G_(j) laterally thereof (onthe left thereof in FIG. 5). The abovesaid predetermined distance islarge as compared with the thickness of the non-single-crystalsemiconductor laminate member 42. It is preferable, however, to minimizethis distance. By the aid of a computer the groove O_(j) can be providedin close proximity to the groove G_(j) with high accuracy. This permitsreduction of the area of the substrate 1 occupied by the region 14 ofthe electrode E_(j). It is desirable that the groove O_(n) be formedclosely to the marginal edge of the electrode E_(n) on the opposite sidefrom the electrode E_(n-1) so that the region 14 of the electrode E_(n)may occupy minimum area of the substrate.

Next, a conductive layer 43, which will ultimately form the electrodesF₁ to F_(n) and F₀ referred to in respect to FIGS. 1 and 2, is formed,for example, by vapor deposition on the substrate 1 to cover thenon-single-crystal semiconductor liminate members Q₁ to Q_(n) and tofill the grooves O₁ to O_(n), forming coupling portions K₁ to K_(n). Inthis case, the conductive layer 43 is formed to extend on the substrate1 except for both marginal portions in its widthwise direction but itcovers both marginal portions of the substrate 1 in its lengthwisedirection.

Next, the conductive layer 43 is selectively removed by laser beamscanning as is the case with the non-single-crystal semiconductorlaminate members Q₁ to Q_(n). By this laser beam scanning there areformed in the conductive layer 43 n portions H₁ to H_(n), n electrodesF₁ to F_(n) separated by the isolating portions H₁ to H_(n-1),respectively, and opposite to the electrodes E₁ to E_(n) across thenon-single-crystal semiconductor laminate members Q₁ to Q_(n),respectively, and an electrode F₀ isolated by the isolating portionH_(n) from the electrode F_(n) and opposite to electrode E_(n). In thiscase, the laser beam scanning is carried out so that the electrodeF_(j+1) may be linked with the electrode E_(j) through the couplingportion K_(j) and so that the electrode F₀ may be linked with theelectrode E_(n) through the coupling portion K_(n).

By the abovesaid laser beam scanning, the isolating portion H_(i) (i=1,2, ... n) can be formed to extend into the non-single-crystalsemiconductor laminate member Q_(i).

As is the case with the conductive layer 41, the laser beam scanning ofthe conductive layer 43 can be effected in the air and may also becarried out in the atmosphere of a gas which reacts with the materialsof the conductive layer 43 and the non-single-crystal semiconductorlaminate members Q₁ to Q_(n) at high temperatures to sputter them fromthe substrate surface. The gas used in this case may be the aforesaidgases.

Also in the case of performing the laser beam scanning of the conductivelayer 43 in the air, it is desirable that the laser beam scanning befollowed by deburring through the use of the aforesaid gas or etchingusing the aforesaid liquid as the etchant.

By the laser beam scanning for the conductive layer 43, the isolatingportion H_(i) can be provided in the form of a groove as illustrated.

The laser beam scanning of the conductive layer 43 can also be carriedout easily and accurately by the aid of a computer while monitoringthrough a video camera device.

Further, the isolating portion H_(i) is formed a predetermined distanceapart from the groove O_(i) laterally thereof (on the left thereof inthe drawing). The abovesaid predetermined distance is large as comparedwith the thickness of the non-single-crystal semiconductor laminatemember 43, but it may preferably be selected as small as possible. Bythe aid of a computer, the isolating portion H_(i) can be formed inclose proximity to the groove O_(i) with high precision. This allowsreduction of the area of the substrate 1 occupied by the region 13formed in the non-single-crystal semiconductor laminate member Q_(i).

Next, a transparent antireflection and protective film 15 is formed by aknown method on the substrate to cover the electrodes F₁ to F_(n) and F₀and the isolating portion H₁ as shown in FIG. 2.

In the manner described above, the photoelectric conversion device ofthe present invention, shown in FIGS. 1 and 2, is manufactured.

The above is a description of an embodiment of the present invention andan example of its manufacturing method.

According to the photoelectric conversion device of FIGS. 1 and 2, whenlight (not shown) is incident thereon from the side of the substrate 1or the electrodes F₁ to F_(n) each semiconductor element U_(i) (i=1, 2,... n) carries out photoelectric conversion to generate photovoltageacross its electrodes E_(i) and F_(i).

The electrode F_(j+1) (j=1, 2, ... (n-1)) of the semiconductor elementU_(j+1) is linked with the electrode E_(j) of the semiconductor elementU_(j) through the coupling portion K_(j) and the electrode F₁ of thesemiconductor element U₁ is connected to an external connection terminal11 and the electrode E_(n) of the semiconductor element U_(n) isconnected to an external connection terminal 12 through the couplingportion K_(n) and the electrode F₀.

Accordingly, the semiconductor elements U₁ to U_(n) are sequentiallyconnected in series through the coupling portions K₁ to K_(n-1) andconnected to the external connection terminals 11 and 12. Consequently,upon incidence of light, there is developed across the externalconnection terminals 11 and 12 the photovoltage that is equal to the sumof voltages produced by the semiconductor elements U₁ to U_(n).

In addition, by forming the electrodes E_(i) and F_(i) of thesemiconductor element U_(i) as the reflective electrodes as describedpreviously with respect to FIG. 3, incident light can efficiently beutilized by the semiconductor element U_(i), providing for increasedphotovoltage per unit area of the substrate 1.

Besides, in the case where the layer of the electrode E_(i) contactingthe non-single-crystal semiconductor laminate member Q_(i) is formed asthe aforesaid metal oxide layer, an excellent ohmic contact can be madebetween the electrode E_(i) and the non-single-crystal semiconductorlaminate member Q_(i), so that high photovoltage can be obtained fromthe semiconductor element U_(i) with practically no loss.

These features can be made more marked if the layer of the electrodeE_(i) contacting the non-single-crystal semiconductor laminate memberQ_(i) is formed of a tin oxide or a metallic oxide consistingprincipally thereof, or an indium oxide or a metallic oxide consistingprincipally thereof, depending on whether the non-single-crystalsemiconductor layer of the non-single-crystal semiconductor laminatemember Q_(i) contacting the electrode E_(i) is P-type or N-type,respectively.

Where the groove O_(j) cut in the non-single-crystal semiconductorlaminate member Q_(j) is extended into the electrode E_(j) asillustrated, the coupling portion K_(j) extending from the electrodeF_(j+1) makes side-contact with the electrode E_(j) and hence makes goodohmic contact therewith, ensuring the obtainment of large electromotiveforce across the external connection terminals 11 and 12 with noappreciable loss. This is more marked when the coupling portion K_(j)and the electrode E_(j) are linked with each other through their metaloxide layers.

Since the isolating portion H_(j) is formed to extend into thenon-single-crystal semiconductor laminate member Q_(j) as illustrated,substantially no leakage occurs through the non-single-crystalsemiconductor laminate members Q_(j) between the electrode E_(j) andF_(j+1), ensuring the obtainment of large electromotive force across theexternal connection terminals 11 and 12.

In the embodiment of FIGS. 1 and 2, the non-single-crystal semiconductorlaminate member Q₁ of the semiconductor element U₁ is formed on theelectrode E₁ to extend onto the substrate 1 on the side surface of theelectrode E₁ on the opposite side from the non-single-crystalsemiconductor laminate member Q₂, and the electrode F₁ is formed on thenon-single-crystal semiconductor laminate member Q₁ to extend onto thesubstrate 1 on the side surface and the extended portion is used as theexternal connection terminal 11. With such an arrangement, the seriescircuit of the semiconductor elements U₁ to U_(n) can easily beconnected at one end to the external connection terminal 11. Thispermits simplification of the construction of photoelectric conversiondevice as a whole.

Further, in the embodiment of FIGS. 1 and 2, the non-single-crystalsemiconductor laminate member Q_(n) is formed to extend on the sidesurface of the electrode E_(n) on the opposite side from the electrodeE_(n-1) towards the substrate 1. The electrode F₀ is formed on thenon-single-crystal semiconductor laminate member Q_(n) to extend to thesubstrate surface and the electrode F₀ is coupled with the electrodeE_(n) through the coupling portion K_(n). And the extended portion ofthe electrode F₀ on the substrate 1 is used as the external connectionterminal 12. Accordingly, the series circuit of the semiconductorelements U₁ to U_(n) cab easily be connected at one end to the externalconnection terminal 12, permitting simplification of the overallstructure of the photoelectric conversion device.

A description will now be given of other embodiments of thephotoelectric conversion device of the present invention.

In the embodiment of the photoelectric conversion device of the presentinvention depicted in FIGS. 1 to 3, the groove O_(j) extends completelythrough the electrode E_(j) to reach the substrate 1, and the couplingportion K_(j) makes contact only with the side of the electrode E_(j)expose by the groove O_(j).

In other embodiment of the photoelectric conversion device of thepresent invention, however, as shown in FIG. 6A, the groove O_(j) is notextended into the electrode E_(j) and the coupling portion K_(j) isformed to make contact only with the top of the electrode E_(j) exposedby the groove O_(j).

Further, as shown in FIG. 6B, the width of the groove O_(j) in theelectrode E_(j) is made smaller than in the non-single-crystalsemiconductor laminate member Q_(j) and the coupling portion K_(j) isformed to make contact with the top and side of the electrode E_(j)exposed by the groove O_(j).

Moreover, according to another embodiment, as shown in FIG. 6C, thegroove O_(j) is extended into the substrate 1 with a greater width thanin the electrode E_(j), and the coupling portion K_(j) is formed to makecontact with the side and bottom of the electrode E_(j) exposed by thegroove O_(j).

According to another embodiment, as shown in FIG. 6D, the groove O_(j)is extended across the electrode E_(j) as in the case of FIG. 6B andinto the substrate 1 as in the case of FIG. 6C, and the coupling portionK_(j) is formed to make contact with the top, side and bottom of theelectrode E_(j) exposed by the groove O_(j).

In the embodiments illustrated in FIGS. 6A to D, the groove O_(j) caneasily be formed by the same laser beam scanning as that for thenon-single-crystal semiconductor laminate member Q_(j) describedpreviously with respect to FIG. 5 but, in this case, the intensity ofthe laser beam is adjusted suitably.

It will be seen that any of the structures of the embodiments providedwith the grooves shown in FIGS. 6A to D possesses the same advantages asare obtainable with the embodiment of FIGS. 1 to 3, though not describedin detail.

In the embodiment of the photoelectric conversion device shown in FIGS.1 to 3, the electrodes F_(j) and F_(j+1) of the semiconductor elementsU_(j) and U_(j+1) are isolated by the isolating portion provided in theform of a groove and the isolating portion H_(j) extends into thenon-single-crystal semiconductor laminate member Q_(i). The embodimentof FIG. 7B corresponding to FIG. 3 is indentical in construction to theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j)extends completely through the non-single-crystal semiconductor laminatemember Q_(i). Such isolating portions H₁ to H_(n) can easily be formedby adjusting the scanning speed and/or power of the laser beam in thelaser beam scanning for the conductive layer 43 described previously inconnection with FIG. 5.

Further, the embodiment of FIG. 7C corresponding to the FIG. 3photoelectric conversion device of the present invention is identical inconstruction to the embodiment of FIGS. 1 to 3 except that the isolatingportion H_(j) consists of the groove 16 defined between the electrodesF_(j) and F_(j+1) and the oxide 17 of the non-single-crystalsemiconductor forming the non-single-crystal semiconductor laminatemember Q_(j), which is formed in the upper half portion thereof.

Such isolating portions H₁ to H_(n) can easily be formed by carrying outin an oxygen atmosphere the laser beam scanning for the conductive layer43 described previously with respect to FIG. 5.

Likewise, the embodiment of FIG. 7D is identical in construction to theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j) isformed by an oxide 18 which results from oxidation of the conductivematerial forming the electrodes F_(j) and F_(j+1) and separates them asshown. Such isolating portions H₁ to H_(n) can easily be formed by thesame laser beam scanning as that employed for the third embodiment ofFIG. 7C.

The embodiment of FIG. 7A is also identical in construction to theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j) isformed by the groove 16 which barely extends into the non-single-crystalsemiconductor laminate member Q_(j) but separates the electrodes E_(j)and E_(j+1) as shown. Such isolating portion H₁ to H_(N) can easily beformed by adjusting the scanning speed and/or power of the laser beam inthe laser beam scanning as in the embodiment of FIG. 5.

The embodiment of FIG. 7E is identical in construction to the embodimentof FIGS. 1 to 3 except that the isolating portion H_(j) has such astructure that an oxide layer is formed on the interior surface of thegroove described previously with respect to FIG. 3.

Such an isolating portion H_(j) can easily be formed be performing thelaser beam scanning for the conductive layer 43 mentioned previouslywith regard to FIG. 5 in an oxygen atmosphere as in the embodiment ofFIG. 7D.

It is evident that all the arrangements of the embodiments having theisolating portions H₁ to H_(n), shown in FIGS. 7A to E, have the samefeatures as those of the embodiment of FIGS. 1 to 3, though notdescribed in detail.

In the embodiment of FIGS. 1 to 3, the series circuit of thesemiconductor elements U₁ to U_(n) constituting one photoelectricconversion device on the substrate 1 is connected at one end to theexternal connection terminal 11, which is formed by the extended portionof the electrode E₁ of the semiconductor element U₁ on the substrate 1,and connected at the other end to the external connection terminal 12which is formed by the extended portion of the electrode F₀ on thesubstrate 1 and connected to the electrode E_(n) through the couplingportion K_(n).

In another embodiment of the present invention, however, a plurality a×bof such photoelectric conversion devices, each made up of the nsemiconductor elements U₁ to U_(n) connected in series as shown in FIGS.1 and 2, are arranged in the form of a matrix consisting of a rows and bcolumns as illustrated in FIGS. 9 and 10 corresponding to FIGS. 1 and 2.In FIGS. 9 and 10 reference character M_(rs) (r=1, 2, ... a and s=1, 2,... b) indicates each photoelectric conversion device disposed at one ofthe intersections of rows and columns. The photoelectric conversiondevices M₁₁ to M_(1b), M₂₁ to M_(2b), ... and M_(a1) to M_(ab) areisolated by grooves 26 between adjacent devices.

In the embodiment illustrated in FIGS. 9 and 10, the photoelectricconversion device M_(rs) is identical in construction with thephotoelectric conversion device of the embodiment of FIGS. 1 to 3 exceptin the following points:

As shown in FIG. 11A, an electrode E₀ similar to the electrodes E₁ toE_(n) is formed on the substrate 1 but spaced from the electrode E₁ by agroove G₀ similar to those G₁ to G_(n-1).

Further, the non-single-crystal semiconductor laminate member Q₁ of thesemiconductor element U₁ extends across the groove G₀ to the marginaledge of the electrode E₀.

The electrode F₁ of the semiconductor element U₁, which is formed tocover the non-single-crystal semiconductor laminate member Q₁ and extendto the substrate 1 in the first embodiment, is formed to extend only tothe marginal edge of the corresponding non-single-crystal semiconductorlaminate member Q₁. And the external connection terminal 11 is formed bythe end portion of the electrode F₁ on the non-single-crystalsemiconductor laminate member Q₁ on the opposite side from the electrodeF₂.

Moreover, as shown in FIG. 11B, the non-single-crystal semiconductorlaminate member Q_(n) of the semiconductor element U_(n) is formed toextend to the marginal edge of the electrode E_(n).

The electrode F₀, though formed to cover the non-single-crystalsemiconductor laminate member Q_(n) and to extend to the substrate 1 inthe embodiment of FIGS. 1 to 3, extends to the marginal edge of thecorresponding non-single-crystal semiconductor laminate member Q_(n).And the external connection terminal 12 is formed by the end portion ofthe electrode F₀ on the non-single-crystal semiconductor laminate memberQ_(n) on the opposite side from the electrode F_(n).

The above is a description of the abovesaid another embodiment of thephotoelectric conversion device of the present invention.

The photoelectric conversion device of such a construction can beobtained by a manufacturing method similar to that employed for thefabrication of the photoelectric conversion device of the embodiment ofFIGS. 1 to 3.

That is, as shown in FIGS. 12A to G corresponding to FIGS. 5A to G, a×bphotoelectric conversion devices M₁₁ to M_(1b), M₂₁ to M_(2b), ... andM_(a1) to M_(ab) are formed on the substrate 1 by a sequence of stepssimilar to those shown in FIGS. 5A to G, though not described in detail.Next, as shown in FIG. 12H, the grooves 26 are formed by the same laserbeam scanning as described previously in respect of FIG. 4.

Next, the light transparent antireflection and protective film 15 (notshown) is formed.

In this way, the structure of the embodiment referred to previously inconjunction with FIGS. 9 and 10 is obtained.

The above is a description of the abovesaid another embodiment and itsmanufacturing method.

The photoelectric conversion device of FIGS. 9 and 10 is identical inconstruction to the embodiment of FIGS. 1 to 3 except in the abovesaidpoints, and hence presents the same advantages as those obtainable withthe embodiment of FIGS. 1 to 4, though not described in detail.

Moreover, according to the embodiment of FIGS. 9 and 10, thephotoelectric conversion devices M₁₁ to M_(1b), M₂₁ to M_(2b), ... andM_(a1) to M_(ab) are formed on the substrate 1 and separated by thegrooves 26. If the substrate 1 is formed of a flexible, insulatingsheet-like member, it can easily be severed at the positions of thegrooves 26 into a×b independent photoelectric conversion devices.

Incidentally, the embodiment of FIGS. 9 and 10 can also be modified andvaried in the same manner as in the second to ninth embodiments of FIGS.6 to 8 which are modifications and variations of the embodiment of FIGS.1 to 4.

While in the foregoing embodiments of the present invention the grooveO_(j) formed in each of the non-single-crystal semiconductor laminatemembers Q_(j) is shown to be a groove which continuously extends in thevertical direction to completely isolate the non-single-crystalsemiconductor laminate memers Q_(j) and Q_(j+1) mechanically, the grooveO_(j) may also be formed to discontinuously extend in the verticaldirection so that the non-single-crystal semiconductor laminate membersQ_(j) and Q_(j+1) may not completely be isolated by the groove O_(j)from each other.

It will be apparent that may modifications and variations may beeffected without departing from the scope of the novel concepts of thepresent invention.

What is claimed is:
 1. A photoelectric conversion device comprising:asubstrate having an insulating surface; and a plurality n (n being aninteger larger than one) of semiconductor elements U₁ to U_(n)sequentially formed thereon side by side and connected in series oneafter another; wherein the semiconductor element U_(i) (i=1, 2, ... n)has a first electrode E_(i) formed on the substrate, anon-single-crystal semiconductor laminate member Q_(i) formed on thefirst electrode E_(i) and having formed therein at least onesemiconductor junction, and a second electrode F_(i) formed on thenon-single-crystal-semiconductor laminate member Q_(i) in opposingrelation to the first electrode E_(i) ; wherein the second electrodeF_(j+1) (j=1, 2, ... (n-1)) of the semiconductor element U_(j+1) iscoupled with the first electrode E_(j) of the semiconductor elementU_(j) through a coupling portion K_(j) formed by an extension of thesecond electrode F_(j+1) ; wherein the non-single-crystal semiconductorlaminate member Q_(i) has (a) a first non-single-crystal semiconductorlayer of a first conductivity type and making contact with the firstelectrode E_(i), and a second non-single-crystal semiconductor layer ofa second conductivity type reverse from the first conductivity type andmaking contact with the second electrode F_(i) ; wherein the firstelectrode E_(i) is formed by a first layered member having a conductivefirst metal oxide layer; wherein the second electrode F_(i) and thecoupling portion K_(j) are formed by a second layered member having aconductive second metal oxide layer; wherein the first metal oxide layerof the first electrode E_(i) is formed of indium oxide or a materialconsisting principally thereof, or tin oxide or a material consistingprincipally thereof depending upon whether the first conductivity typeof the first non-single-crystal semiconductor layer is the N or Pconductivity type, respectively, and the first metal oxide layer is incontact with the first non-single-crystal semiconductor layer; whereinsaid second metal oxide layer of said second electrode F_(i) and thecoupling portion K_(j) are formed of tin oxide or a material consistingprincipally thereof, or indium oxide or a material consistingprincipally thereof, depending upon whether the second conductivity typeof the second non-single-crystal semiconductor layer is the P or Nconductivity type, respectively, the second metal oxide layer of thesecond electrode F_(i) being in contact with the secondnon-single-crystal semiconductor layer and the coupling portion K_(j)being coupled with the first metal oxide layer of the first electrodeE_(j).
 2. A photoelectric conversion device according to claim 1,wherein the substrate and the first electrode E_(i) arelight-transparent.
 3. A photoelectric conversion device according toclaim 2, wherein the first layered member of the first electrode E_(j)has the first metal oxide layer making contact with the firstnon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) and a first conductive materiallayer formed under the first metal oxide layer, and wherein the firstmetal oxide layer and the first conductive material layer arelight-transparent.
 4. A photoelectric conversion device according toclaim 1, wherein the second electrode F_(i) is light-transparent.
 5. Aphotoelectric conversion device according to claim 4, wherein the secondlayered member of the second electrode F_(i) has the second metal oxidelayer making contact with the second non-single-crystal semiconductorlayer of the non-single-crystal semiconductor laminate member Q_(i) anda second conductive material layer formed on the second metal oxidelayer, and wherein the second metal oxide layer and the secondconductive material layer are light-transparent.
 6. A photoelectricconversion device according to claim 1, wherein the first electrodeE_(j) and the first electrode E_(j+1) are separated by a first grooveG_(j), wherein the second electrode F_(j+1) extends on thenon-single-crystal semiconductor laminate member Q_(j) in opposingrelation to the first electrode E_(j), wherein a second groove O_(j) iscut in the non-single-crystal semiconductor laminate member Q_(i) toextend between the second electrode F_(j+1) and the first electrodeE_(j), and wherein the coupling portion K_(j) extends into the secondgroove O_(j).
 7. A photoelectric conversion device according to claim 6,wherein the second metal oxide layer of the coupling portion K_(j) iscoupled with the top of the first metal oxide layer of the firstelectrode E_(j).
 8. A photoelectric conversion device according to claim6, wherein the second groove O_(j) extends into the first electrodeE_(j).
 9. A photoelectric conversion device according to claim 8,wherein the second metal oxide layer of the coupling portion K_(j) iscoupled with the side of the first metal oxide layer of the firstelectrode E_(j) exposed by the second groove O_(j).
 10. A photoelectricconversion device according to claim 6, wherein the second groove O_(j)extends into the first electrode E_(j) with a smaller width than in thenon-single-crystal semiconductor laminate member Q_(j).
 11. Aphotoelectric converion device according to claim 10, wherein the secondmetal oxide layer of the coupling portion K_(j) is coupled with the topand the side of the first metal oxide layer of the first electrode E_(j)exposed by the second groove O_(j).
 12. A photoelectric conversiondevice according to claim 6, wherein the second groove O_(j) extendsthrough the first electrode E_(j) into the substrate with a widthgreater than in the first electrode E_(j).
 13. A photoelecrtricconversion device according to claim 12, wherein the second metal oxidelayer of the coupling portion K_(j) is coupled with the side and thebottom of the first electrode E_(j) exposed by the second groove O_(j).14. A photoelectric conversion device according to claim 6, wherein thesecond groove O_(j) extends through the first electrode E_(j) with awidth smaller than in the non-single-crystal semiconductor laminatemember Q_(j) and into the substrate with a width greater than in thefirst electrode E_(j).
 15. A photoelectric conversion device accordingto claim 14, wherein the second metal oxide layer of the couplingportion K_(j) is coupled with the top, side, and bottom of the firstelectrode E_(j) exposed by the second groove O_(j).
 16. A photoelectricconversion device according to claim 1 or 6, wherein the first layeredmember of the first electrode E_(i) has a first conductive materiallayer formed under the first metal oxide layer and making contact withthe substrate.
 17. A photoelectric conversion device according to claim1 or 6, wherein the first non-single-crystal semiconductor layer of thenon-single-crystal semiconductor laminate member Q_(i) is the N type,wherein the first layered member of the first electrode E_(i) has thefirst metal oxide layer making contact with the N type firstnon-single-crystal semiconductor layer and formed of indium oxide or amaterial consisting principally thereof and a layer formed thereunder oftin oxide or a material consisting principally thereof and makingcontact with the substrate.
 18. A photoelectric conversion deviceaccording to claim 1 or 6, wherein the first conductivity type of thefirst non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) is the P type, wherein the firstlayered member of the first electrode E_(i) has the first metal oxidelayer making contact with the P type first non-single-crystalsemiconductor layer and formed of tin oxide or a material consistingprincipally thereof and a layer formed thereunder of indium oxide or amaterial consisting principally thereof and making contact with thesubstrate.
 19. A photoelectric conversion device according to claim 1 or6, wherein the second conductivity type of the second non-single-crystalsemiconductor layer of the non-single-crystal semiconductor laminatemember Q_(i) is the N type, wherein the second layered member of thesecond electrode F_(i) has the second metal oxide layer making contactwith the N type second non-single-crystal semiconductor layer and formedof indium oxide or a material consisting principally thereof and asecond conductive material layer formed on the second metal oxide layer.20. A photoelectric conversion device according to claim 19, wherein thesecond conductive material layer is a reflective metal layer.
 21. Aphotoelectric conversion device according to claim 19, wherein thesecond conductive material layer is a sublimable metal layer.
 22. Aphotoelectric conversion device according to claim 21, wherein thesublimable metal layer is a layer formed of chromium or a materialconsisting principally thereof.
 23. A photoelectric conversion deviceaccording to claim 1 or 6, wherein the second conductivity type of thesecond non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) is the P type, wherein the secondlayered member of the second electrode F_(i) has the second metal oxidelayer making contact with the P type second non-single-crystalsemiconductor layer and a second conductive material layer formed on thesecond metal oxide layer.
 24. A photoelectric conversion deviceaccording to claim 23, wherein the second conductive material layer is areflective metal layer.
 25. A photoelectric conversion device accordingto claim 23, wherein the second conductive layer is a sublimable metallayer.
 26. A photoelectric conversion device according to claim 25,wherein the sublimable metal layer is a layer formed of chromium or amaterial consisting principally thereof.
 27. A photoelecrric conversiondevice according to claim 1 or 6, wherein the second conductivity typeof the second non-single-crystal semiconductor layer of thenon-single-crystal semiconductor laminate member Q_(i) is the P type,wherein the second layered member of the second electrode F_(i) has thesecond metal oxide layer making contact with the P type secondnon-single-crystal semiconductor layer and formed of tin oxide or amaterial consisting principally thereof and a layer formed thereon ofindium oxide or a material consisting principally thereof.
 28. Aphotoelectric conversion device according to claim 1, wherein rhesubstrate is formed by a sheet of light-transparent glass, and whereinthe first electrode E_(i) is light-transparent.
 29. A photoelectricconversion device according to claim 1, wherein the substrate is formedby a sheet of light-transparent organic resin, and wherein the firstelectrode E_(i) is light-transparent.
 30. A photoelectric conversiondevice according to claim 1, wherein the substrate is formed by aflexible sheet of light-transparent organic resin, and wherein the firstelectrode E_(i) is light-transparent.
 31. A photoelectric conversiondevice according to claim 1, wherein the substrate is formed by aflexible sheet of organic resin.
 32. A photoelectric conversion deviceaccording to claim 1, wherein the substrate is formed by a flexiblesheet of metal deposited over its surface with an insulating film.
 33. Aphotoelectric conversion device according to claim 32, wherein tneinsulating film is formed by the oxidation of the surface of theflexible sheet of metal.
 34. A photoelectric conversion device accordingto claim 32, wherein the insulating film is a film formed of aluminumoxide or consisting principally thereof.